The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode

The temperature dependence of photoluminescence measurement was performed o n an undoped In0.126Ga0.874N/GaN multiple quantum well (MQW) structure and a light emitting diode (LED) structure using this MQW as an active region. The emission energy of the LED structure showed a red shift of about 230 me V at room temperature compared with the undoped In0.126Ga0.874N/GaN MQW. Th is behavior of the LED structure is attributed to the quantum-confined Star k effect due to its p-n junction induced electric field. This conclusion wa s confirmed by a calculation and a detailed discussion based on the theory of the quantum-confined Stark effect. (C) 1999 American Institute of Physic s. [S0003-6951(99)05110-4].