A monohydride high-index silicon surface: Si(114): H-(2x1)

We describe the adsorption of H on Si(114)-(2x1) as characterized by scanni ng tunneling microscopy and first-principles calculations. Like Si(001)- an d despite the relative complexity of the (114) structure-a well-ordered, lo w-defect-density monohydride surface forms at similar to 400 degrees C. Sur prisingly, the clean surface reconstruction is essentially maintained on th e (2 x 1) monohydride surface, composed of dimers, rebonded double-layer st eps, and nonrebonded double-layer steps, with each surface atom terminated by a single H. This H- passivated surface can also be easily and uniformly patterned by selectively desorbing the H with low-voltage electrons. (C) 19 99 American Institute of Physics. [S0003-6951(99)04010-3].