Local characterization of electronic transport in microcrystalline siliconthin films with submicron resolution

Citation
B. Rezek et al., Local characterization of electronic transport in microcrystalline siliconthin films with submicron resolution, APPL PHYS L, 74(10), 1999, pp. 1475-1477
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
10
Year of publication
1999
Pages
1475 - 1477
Database
ISI
SICI code
0003-6951(19990308)74:10<1475:LCOETI>2.0.ZU;2-J
Abstract
Two-dimensional maps of dark conductivity with submicron resolution have be en obtained on in situ prepared hydrogenated microcrystalline silicon (mu c -Si:H) layers used for solar cells by atomic force microscopy with conducti ve cantilever. Comparison of the morphology and current image allows clear identification of Si crystallites. Pronounced current decrease has been det ected at the grain boundaries. The technique was used to study initial stag es of mu c Si:H growth, and we show how the incubation layer, detrimental f or solar cells efficiency, can be minimized by pulsed excimer laser crystal lization of the initial amorphous layer. (C) 1999 American Institute of Phy sics. [S0003-6951(99)00410-6].