Highly c-axis oriented Pb(Zr,Ti)O-3 thin films grown on Ir electrode barrier and their electrical properties

We have investigated the structural and electrical properties of sol-gel de rived Pb(Zr, Ti)O-3 (PZT) thin films deposited on Ir electrode barrier (Ir/ poly-Si/SiO2/Si). Owing to the interface-controlled growth, highly c-axis o riented perovskite PZT thin films were obtained for the postdeposition anne aling temperature of 580 degrees C. Additionally, we found that the ferroel ectric properties of IrO2/PZT/Ir/poly-Si capacitors were remarkably changed by the partial pressure of oxygen during the deposition of IrO2 top electr odes, which could be due to the enhanced reaction of IrO2 with PZT by the o xygen ion bombardments. Remanent polarization and coercive field of IrO2/PZ T/Ir/poly-Si capacitor with the top electrodes deposited at P-O2 = 1 mTorr was 20 mu C/cm(2) and 30 kV/cm, respectively, and showed negligible polariz ation fatigue up to 10(11) switching repetitions. The leakage current densi ty at a field of 80 kV was 5 X 10(-8) A/ cm(2). (C) 1999 American Institute of Physics. [S0003-6951(99)01510-7].