Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire (vol 73, pg 3090, 1998)

Citation
Y. Golan et al., Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire (vol 73, pg 3090, 1998), APPL PHYS L, 74(10), 1999, pp. 1498-1498
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
10
Year of publication
1999
Pages
1498 - 1498
Database
ISI
SICI code
0003-6951(19990308)74:10<1498:MAMEIT>2.0.ZU;2-W