True atomic resolution imaging of surface structure and surface charge on the GaAs(110)

Citation
Y. Sugawara et al., True atomic resolution imaging of surface structure and surface charge on the GaAs(110), APPL SURF S, 140(3-4), 1999, pp. 371-375
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
140
Issue
3-4
Year of publication
1999
Pages
371 - 375
Database
ISI
SICI code
0169-4332(199902)140:3-4<371:TARIOS>2.0.ZU;2-A
Abstract
We demonstrated a novel method to detect the van der Weals and the electros tatic force interactions simultaneously on an atomic scale, which is based on frequency modulation detection method. For the first time, the surface s tructure and the surface charge at atomic-scale point defects on the GaAs(1 10) surface have been simultaneously resolved with true atomic resolution u nder ultra-high vacuum condition. From the bias voltage dependence of the i mage contrast, we can verify that the sign of the atomically resolved surfa ce charge at the point defect was positive. (C) 1999 Elsevier Science B.V. All rights reserved.