Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's

Authors
Anteney, IM Lippert, G Ashburn, P Osten, HJ Heinemann, B Parker, GJ Knoll, D
Citation
Im. Anteney et al., Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's, IEEE ELEC D, 20(3), 1999, pp. 116-118
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
3
Year of publication
1999
Pages
116 - 118
Database
ISI
SICI code
0741-3106(199903)20:3<116:COTEOC>2.0.ZU;2-A
Abstract
An electrical method is applied to SiGe and SiGe:C heterojunction bipolar t ransistors (HBT's) to extract the bandgap narrowing in the base layer and t o characterize the presence of parasitic energy barriers in the conduction band, arising from boron transient enhanced out-diffusion from the SiGe lay er. It is shown that a background carbon concentration within the base (app roximate to 10(20) cm(-3)) eliminates parasitic energy barriers at the coll ector/base junction, and hence shows that transient enhanced diffusion of b oron from the base has been completely suppressed.