RTD/CMOS nanoelectronic circuits: Thin-film InP-based resonant tunneling diodes integrated with CMOS circuits

The combination of resonant tunneling diodes (RTD's) and complementary meta l-oxide-semiconductor (CMOS) silicon circuitry can offer substantial improv ement in speed, power dissipation, and circuit complexity over CMOS-only ci rcuits. We demonstrate the first integrated resonant tunneling CMOS circuit , a clocked 1-bit comparator with a device count of six, compared with 21 i n a comparable all-CMOS design. A hybrid integration process is developed f or InP-based RTD's which are transferred and bonded to CMOS chips. The prot otype comparator shows sensitivity in excess of 10(6) VIA, and achieves err or-free performance in functionality testing. An optimized integration proc ess, under development, can yield high-speed, low power circuits by lowerin g the high parasitic capacitance associated with the prototype circuit.