Modeling of the performance of high-power diode amplifier systems with an optothermal microscopic spatio-temporal theory

We present a detailed theoretical analysis of the dependence of spatio-temp oral carrier and light field dynamics of high-power diode amplifier systems on their geometry and facet reflectivities as well as on the spatial and s pectral characteristics of the optical input beam. The basis of the numeric al modeling is the Maxwell-Bloch equations for spatially inhomogeneous semi conductor lasers which are self-consistently coupled to the nonequilibrium temperature dynamics of the electron-hole plasma. They microscopically desc ribe the interaction between the optical fields, the charge carriers, and t he interband polarization. Our numerical modeling allows an identification of the influence of dynamic internal laser effects such as diffraction, sel f-focusing, scattering, carrier diffusion, and heating on the performance o f broad-area or tapered amplifiers (e.g., far field, near field). It thus p rovides a means of optimizing the epitaxial structure and geometry of high- power diode amplifier systems.