The two-dimensional lateral injection in-plane laser

In this paper, a two-dimensional (2-D) p-n junction was used for population inversion in a GaAs quantum-well laser. The device, incorporating modulati on doping within the core of a separate confinement heterostructure, was de signed to exploit the amphoteric behavior of silicon in GaAs [doping p-type on (311)A facets and n-type on (100)]. It is believed to be the first lasi ng de,ice to use an amphoterically doped junction for population inversion. In the first attempted design (described here), CW lasing was achieved at temperatures up to 90 K. The factors affecting the temperature dependence o f threshold are discussed in the context of possible design improvements, T he device may eventually show improved modulation bandwidth over convention al vertical injection lasers with bulk contacts, since its geometry and the 2-D nature of the injection offer reduced capacitance, HEMT integration, a nd an elimination of carrier capture problems.