All-selective MOVPE-grown 1.3-mu m strained multi-quantum-well buried-heterostructure laser diodes

Strained InGaAsP multi-quantum-wed (MQW) double-channel planar-buried-heter o (DC-PBH) laser diodes (LD's, were fabricated by selective metalorganic-va por-phase epitaxy (MOVPE), In the laser fabrication process, both the strai ned MQW active layer and current blocking structure were directly formed by selective MOVPE without any semiconductor etching process. The LD's are ca lled all-selective MOVPE-grown BH LD's. The laser fabrication process can a chieve both a precisely controlled gain waveguide structure and an excellen t current blocking configuration, realizing the optimized DC-PBH structure. These aspects are essential to the high-performance and low-cost LD, which is strongly demanded for optical access network systems or fiber-to-the-ho me networks. This paper will show the excellent high-temperature characteri stics for 1.3-mu m Fabry-Perot LD's which have a record threshold current o f 18 mA with a low-operation current of 56 mA for 10 mW, and 74 mA for 15 m W at 100 degrees C with extremely high uniformity. Furthermore, reliable lo ng-term operation at high temperature (85 degrees C) and high-output power of 15 mW has been demonstrated for the first time.