Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides a new one of interest. If this non-standard geo metry is made dependent on the biasing condition, original behaviour and ne w I-V characteristics are expected to be obtained. This paper presents a st udy and characterization of this new device and shows that it provides a vo ltage controlled negative resistance. It is seen to have many noticeable ad vantages over existing devices. This new negative resistance should find a wide areas of application in communications, measurements and instrumentati on. It can be used to build up super selective tank circuits which can be e ntirely integrated using MOSFET technology.