Low temperature measurements of open quantum dots exhibit a series of perio
dic oscillations in their conductance as a function of gate voltage at zero
magnetic field. Realistic numerical simulations of the devices confirm the
basic observations of experiment and reveal the existence of periodically
recurring wavefunction scars. The simple periodicity of the conductance osc
illations and the strong scarring of the wavefunction in the dot suggest th
at the intrinsic transport properties, of these devices are dominated by th
e selective excitation of a small number of dot states, even in the absence
of an applied magnetic field.