Conductance through laterally coupled quantum dots

We fabricated laterally coupled quantum dots on a GaAs/Al0.3Ga0.7As single quantum well, and studied their transport properties. We focused on the geo metrical dependence of the conductance through laterally coupled quantum? d ots. The quantum-dot-array pattern was defined by electron beam lithography and deeply etched through the GaAs quantum well layer. We measured the I-V characteristics Of two different types of samples, which consisted of ten quantum dots in straight and zigzag forms. For the straight coupled quantum dots, we observed a single peak in the conductance at zero applied bias. O n the other hand, for the zigzag coupled quantum dots, we observed double p eaks in the conductance at finite applied biases. The difference in I-V cha racteristics is associated with a collimated electron beam entering into th e quantum dots.