Electronic properties and mid-infrared transitions in self-assembled quantum dots

Citation
Jp. Leburton et al., Electronic properties and mid-infrared transitions in self-assembled quantum dots, JPN J A P 1, 38(1B), 1999, pp. 357-365
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
1B
Year of publication
1999
Pages
357 - 365
Database
ISI
SICI code
Abstract
We present a detailed model of the electronic properties of single and vert ically aligned self-assembled pyramidal InAs/GaAs quantum dots (SADs) which is based on the self-consistent solution of three-dimensional (3D) Poisson and Schroedinger equations within the local (spin) density approximation. Nonparabolicity of the band structure and a continuum model for strain betw een GaAs and InAs results in position and energy dependent effective mass, In single SADs, shell structures obeying Hund's rule for various occupation numbers in the pyramids agree well with recent capacitance measurements, T he electronic spectra of SADs of various shapes have been determined with i ntraband level transitions and mid-infrared optical matrix elements, In the case of two vertically aligned pyramidal SADs, we show that quantum mechan ical coupling alone between identical dots underestimates the magnitude of the coupling between the dots, which in large part is due to piezoelectrici ty and size difference between SADs.