Calculation of electrical properties of novel double-barrier metal oxide semiconductor transistors

We propose novel ultrasmall metal-oxide-semiconductor (MOS) transistors wit h double-potential barriers. The structure is similar to the lightly doped drain (LDD) MOS transistors with upper and lower gates. The double-potentia l barriers, which are controlled by the upper gate voltage, are formed unde r the side wall spacers, it is confirmed by simulation that the tunneling c urrent through the double-potential barriers is larger than the thermally e xcited current at 77 K. Then, the Coulomb blockade effects, i.e., the suppr ession of the tunneling current in the vicinity of the zero drain voltage a nd the Coulomb oscillation, are observable at 77 K.