Implementation of single-electron transistor with resistive gate

We have fabricated and measured a resistively coupled single electron trans istor (R-SET). In our implementation, a chromium thin-film resistive gate w as connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx/Al tunnel junctions. The transistor was fabricated by electron beam lithography using the suspended bridge technique. We have measured the cur rent-voltage-gate voltage dependences of the R-SET and observed a character istic Coulomb blockade pattern. Our simulations based on the orthodox theor y of single electron tunneling show good qualitative agreement with the exp erimental data.