1.3 mu m room temperature emission from InAs/GaAs self-assembled quantum dots

We have investigated the growth conditions necessary to achieve strong room temperature emission at 1.3 mu m for InAs/GaAs self-assembled quantum dots (QDs) using conventional solid source molecular beam epitaxy (MBE). A rela tively high substrate temperature and very low growth rate (LGR) result in long wavelength emission with a small linewidth of only 24 meV. Atomic Forc e Micrographs obtained from uncapped samples reveal several differences bet ween the LGRQDs and those grown at higher growth rates. The former are larg er, more uniform in size and their density is lower by a factor of about 4. LGRQDs have been incorporated in p-i-n structures and strong room temperat ure electroluminescence detected. The light output of, the QD p-i-n diodes is found to be significantly higher than a quantum well (QW) sample at leas t for current densities up to 0.5 kAcm(-2).