Temperature dependence of internal quantum efficiency of 20-nm-wide GaInAsP/InP compressively-strained quantum-wire lasers

Citation
T. Kojima et al., Temperature dependence of internal quantum efficiency of 20-nm-wide GaInAsP/InP compressively-strained quantum-wire lasers, JPN J A P 1, 38(1B), 1999, pp. 585-588
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
1B
Year of publication
1999
Pages
585 - 588
Database
ISI
SICI code
Abstract
We evaluated the temperature dependence of the internal quantum efficiency of 1.5-mu m-wavelength GaInAsP/InP compressively-strained 20-nm-wide quantu m-wire lasers from the cavity length dependence of the differential quantum efficiency. As a result, high internal quantum efficiency eta(i) similar t o 1.0 was obtained at T < 200 K, which decreased with an increase in temper ature.