Multi-stacked InAs/InGaAs/InP quantum dot laser (J(th) = 11 A/cm(2), lambda = 1.9 mu m (77 K))

Authors
Zaitsev, SV Gordeev, NY Kopchatov, VI Ustinov, VM Zhukov, AE Egorov, AY Kovsh, AR Kop'ev, PS
Citation
Sv. Zaitsev et al., Multi-stacked InAs/InGaAs/InP quantum dot laser (J(th) = 11 A/cm(2), lambda = 1.9 mu m (77 K)), JPN J A P 1, 38(1B), 1999, pp. 601-604
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
1B
Year of publication
1999
Pages
601 - 604
Database
ISI
SICI code
Abstract
Self-organized InAs quantum dots inserted in an (In, Ga)As matrix lattice m atched to InP substrate were used as an active region of an injection laser . Low threshold (11 A/cm(2)) lasing at 1.9 nm (77 K) via the quantum dot st ates was realized. Temperature dependencies of the main laser parameters de monstrate the important role of the nonradiative recombination. An analysis of basic mechanisms of leakage shows that the Auger recombination share is negligible.