Low-temperature metalorganic vapor phase epitaxy (MOVPE) of GaN using tertiarybutylhydrazine

Tertiarybutylhydrazine was used as a novel nitrogen source for metalorganic vapor phase epitaxy of GaN at low temperatures. Hexagonal epilayers with o ptically smooth and specular surfaces were grown with trimethylgallium on b asal plane sapphire as well as GaAs(111)(B) substrates. On (001)-oriented G aAs, predominantly cubic GaN was grown. Incorporation of carbon impurities was distinctly lower than in layers grown with dimethylhydrazine. The epila yer quality is presently limited by the purity of the available tertiarybut ylhydrazine.