Resonant tunneling field-effect transistor based on wave function shape modulation in quantum wires

Authors
Khurgin, JB Yang, D
Citation
Jb. Khurgin et D. Yang, Resonant tunneling field-effect transistor based on wave function shape modulation in quantum wires, J APPL PHYS, 85(6), 1999, pp. 3218-3221
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
6
Year of publication
1999
Pages
3218 - 3221
Database
ISI
SICI code
0021-8979(19990315)85:6<3218:RTFTBO>2.0.ZU;2-A
Abstract
We propose a new type of three-terminal tunneling device with gating action provided by the external field inducing the changes in the symmetry of ele ctron wave functions. We evaluate the current-voltage characteristics, tran sconductance, and speed of the proposed device. (C) 1999 American Institute of Physics.