Determination of effects of deposition and anneal properties for tetranitratotitanium deposited TiO2 dielectrics

Carbon and hydrogen free tetranitratoitanium was synthesized, which is beli eved to thermally decomposed primarily as: Ti(NO3)(4)-->TiO2+4NO(2)+O-2. Th e by-products of the thermal decomposition of tetranitratotitanium, which i nclude NO2 and O-2, may possibly provide a robust ultrathin tunnel interfac ial layer. Due to the hydrogen free nature of thermolysis, N2O may form an oxynitride layer which has been shown to produce thermal oxynitrides with h igher quality than NH3-based nitride oxides. Unlike titanium tetrakis isopr opoxide (TTIP) deposited films, the interface state density more closely fo llows the "U'' shape characteristic of conventional thermal SiO2/Si interfa ces. The integrated interface state density is considerably less for the fi lm annealed at higher temperature, which should produce considerably higher inversion layer mobilities. This improvement of the interface, compared to TTIP deposited films, is believed to be due to the elimination of water va por from the deposition ambient. (C) 1999 American Institute of Physics.