Characterization of excess carbon in cubic SiC films by infrared absorption

Authors
Sun, Y Miyasato, T Wigmore, JK
Citation
Y. Sun et al., Characterization of excess carbon in cubic SiC films by infrared absorption, J APPL PHYS, 85(6), 1999, pp. 3377-3379
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
6
Year of publication
1999
Pages
3377 - 3379
Database
ISI
SICI code
0021-8979(19990315)85:6<3377:COECIC>2.0.ZU;2-T
Abstract
The behavior of excess carbon in cubic SiC films was investigated using inf rared absorption spectroscopy of modes which were optically activated by de fect-induced strain in the film. The results show that the excess carbon wh ich is formed interstitially in the region of SiC grain boundaries as an in terstitial phase, consists of both crystalline and amorphous phases. The cr ystalline phase declines and the amorphous phase grows when the growth temp erature is increased above 700 degrees C. (C) 1999 American Institute of Ph ysics. [S0021-8979(99)00106-1].