DX centers in InxAl1-xAs

Citation
H. Sari et Hh. Wieder, DX centers in InxAl1-xAs, J APPL PHYS, 85(6), 1999, pp. 3380-3382
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
6
Year of publication
1999
Pages
3380 - 3382
Database
ISI
SICI code
0021-8979(19990315)85:6<3380:DCII>2.0.ZU;2-Q
Abstract
The composition dependence of the energy levels of the DX centers in InxAl1 -xAs/InyGa1-yAs heterostructures have been determined by means of Hall effe ct and persistent photoconductivity measurements made on gated Hall bar tes t structures, primarily in the indirect portion of the fundamental band gap of InxAl1-xAs. The energy of the DX center relative to the average of the main conduction band minima of the Brillouin zone, in the composition range , 0.1 less than or equal to x less than or equal to 0.34, is E(DX)similar t o 0.3 eV; for x>0.4 the DX center is resonant with the conduction band. (C) 1999 American Institute of Physics. [S0021-8979(99)00206-6].