Growth and characterization of antimony doped tin oxide thin films

Citation
S. Shanthi et al., Growth and characterization of antimony doped tin oxide thin films, J CRYST GR, 197(4), 1999, pp. 858-864
Citations number
24
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
197
Issue
4
Year of publication
1999
Pages
858 - 864
Database
ISI
SICI code
0022-0248(199903)197:4<858:GACOAD>2.0.ZU;2-L
Abstract
Pure and antimony doped tin oxide thin films were deposited on glass and qu artz plates by spray pyrolysis method. Structural, electrical and optical p roperties of these films were studied by varying the substrate temperature and antimony concentration. The best electro-optic properties obtained were , resistivity as low as 9 x 10(-4) Omega cm and average transmission of 80% in the visible region, at the substrate temperature of 400 degrees C with the antimony concentration of 9 at%. While doping, change in preferred orie ntation was observed from [1 1 0] to [2 0 0]. The optical investigation sho wed that, depending upon the doping concentration, the antimony doped films had direct allowed transitions in the range 4.13-4.22 eV and indirect allo wed transitions in the range 2.54-2.65 eV. (C) 1999 Elsevier Science B.V. A ll rights reserved.