Samples of n-type germanium with a donor concentration N-d = 2.4 x 10(16) c
m(-3) are plastically deformed to a degree of strain equal to 18-40% to det
ect static conduction by electrons trapped on dislocations in a system of d
islocation grids. In samples with 20%< delta<31%, which retain an electroni
c type of conductivity, the conductivity for T<8 K, which is weakly tempera
ture-dependent, is associated with conduction by electrons trapped on dislo
cations. The nonmonotonic dependence of the conductivity at 4.2 K on the de
gree of strain as the latter increases from 18% to 40% attests to the exist
ence of an energy gap between the donor and acceptor dislocation states in
strongly plastically deformed germanium. (C) 1999 American Institute of Phy
sics. [S1063-7761(99)01101-4].