Preparation and ferroelectric properties of Bi-modified lead zirconate titanate thin film

We have studied the structural and electrical properties of bismuth-modifie d lead zirconate titanate thin films. Specimens with various Bi contents, ( Pb1-3/2xBix) (Zr0.52Ti0.48)O-3 (PBZT) thin films, were prepared on a Pt-coa ted Si wafer by the sol-gel method. Ferroelectricity confirmed by the measu rement of dielectric constant and P-E hysteresis loop was found for specime ns below x = 0.25, in which the values of both dielectric constant and rema nent polarization were decreased with increasing Bi contents. The behaviors of the electrical properties with Bi content corresponded to the structura l changes by increasing non-ferroelectric cubic phase with increasing Pi co ntents, which was thought to be due to the vacancies in Pb-sites created by the substitution of Bi into Pb. (C) 1998 Kluwer Academic Publishers.