Vanadyl precursors used to modify the properties of vanadium oxide thin films obtained by chemical vapor deposition

Vanadium oxide thin films were prepared by chemical vapor deposition using as precursors a series of vanadyl complexes of general formula VO(L)(2)(H), where L is a beta-diketonate ligand. The depositions were carried out on a lpha-Al2O3 subtrates in O-2, N-2, and N-2 + H2O atmospheres. In order to el ucidate the role played by different ligands and synthesis conditions on th e properties of the obtained films, the chemical composition of the samples was investigated by X-ray photoelectron spectroscopy, while their microstr ucture and surface morphology were analyzed by X-ray diffraction, Raman and atomic force microscopy. The thermal decomposition of the precursors, with particular attention to their reactivity in the presence of water vapor, w as studied by mass spectrometry and Fourier transform infrared spectroscopy . (C) 1999 The Electrochemical Society. S0013-4651(97)12-091-2. All rights reserved.