The interrelation between the morphology of oxide precipitates and the junction leakage current in Czochralski silicon crystals

We have studied the interrelationship between the morphology of oxide preci pitates and the p-n junction leakage current in Czochralski silicon crystal s. It is well known that the p-n junction leakage current can be used to me asure the electric characteristic near the surface of a silicon wafer. Afte r we measured the p-n junction leakage current, we studied the morphology o f the oxide precipitates under the p-n junction by transmission electron mi croscopy. The junction leakage current characteristics are almost the same for both preannealing at 780 degrees C for 24 h and 1000 degrees C for 7 h and for preannealing at 1200 degrees C for 0.5 h. In addition, the oxide pr ecipitates near the, surface were almost all in the form of polyhedrals in both preannealing types. However, in a dose of ten times for preannealing a t 1200 degrees C for 0.5 h, the morphology of oxide precipitates near the s urface were polyhedrals with dislocation. That is to say, the morphology of oxide precipitates has been affected by a dose of pf ion implantation. In this paper, we discuss the effects of junction leakage current characterist ics on the morphology of oxide precipitates in the near-surface area. (C) 1 999 The Electrochemical Society. S0013-4651(98)02-017-5. All rights reserve d.