P. Huang et Hf. Lopez, Effects of grain size on development of athermal and strain induced epsilon martensite in Co-Cr-Mo implant alloy, MATER SCI T, 15(2), 1999, pp. 157-164
In the present work, the development of athermal epsilon martensite during
quenching of a low carbon Ca-Cr-Mo alloy was investigated as a function of
the grain size. In addition, a strain induced transformation (SIT)from fcc
to hcp was exhibited during compressive plastic straining. It was found tha
t grain size exerts a strong influence on the resultant volume fractions of
athermal and strain induced epsilon martensite. In particular fine grain s
izes inhibit the formation of athermal martensite while promoting appreciab
le volume fractions of epsilon martensite through the SIT mechanism. Moreov
er, X-ray diffraction analyses indicated that in 10 mu m grained structures
the volume fraction of strain induced epsilon martensite reaches a saturat
ion level of approximately 0.65 just before compressive fracture. In contra
st. increasing grain sizes result in the formation of up to 0.9 volume frac
tion of SIT martensite Moreover the alloy yield strength was found to decre
ase down to 592 MPa (approximately half the yield strength of the as receiv
ed alloy). Annealing gave rise to appreciable improvements in the compressi
ve strength (242 MPa) and ductility (0.41) when compared with the as receiv
ed alloy (2141 MPa and 0.295 respectively). The alloy hardness initially dr
ops from 42 to 29 HRC as the grain sizes increase from 10 to 90 mu m. A fur
ther reduction in allay hardness did not occur for grain sizes between 90 a
nd 324 mu m. Compression straining did not have a significant effect on the
exhibited hardness of the as received alloy and only a model ate effect wa
s found in coarse grained alloys. Alloys with grain sizes of 117 mu m exhib
ited an increase in hardness from roughly 29 to 46 HRC through compression
straining up to 0.407. Probable mechanisms are considered to account for th
e role of grain size an the development of athermal and SIT epsilon martens
ite.