Indentation power-law creep of high-purity indium

Citation
Bn. Lucas et Wc. Oliver, Indentation power-law creep of high-purity indium, MET MAT T A, 30(3), 1999, pp. 601-610
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science",Metallurgy
Journal title
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
ISSN journal
10735623 → ACNP
Volume
30
Issue
3
Year of publication
1999
Pages
601 - 610
Database
ISI
SICI code
1073-5623(199903)30:3<601:IPCOHI>2.0.ZU;2-B
Abstract
Using a variety of depth-sensing indentation techniques, the creep response of high-purity indium, from room temperature to 75 degrees C, was measured . The dependence of the hardness on the variables of indentation strain rat e (stress exponent for creep (n)) and temperature (apparent activation ener gy for creep (Q)) and the existence of a steady-state behavior in an indent ation test with a Berkovich indenter were investigated. It was shown for th e first time that the indentation strain rate ((h) over dot/h) could be hel d constant during an experiment using a Berkovich indenter, by maintaining the loading rate divided by the load ((P) over dot/P) constant. The apparen t activation energy for indentation creep was found to be 78 kJ/mol, in acc ord with the activation energy for self-diffusion in the material. Finally, by performing (P) over dot/P change experiments, it was shown that a stead y-state path independent of hardness could be reached in an indentation tes t with a geometrically similar indenter.