Microwave performance and reliability evaluation of MOCVD-grown AlInAs/GaInAs/InP-based HEMTs

Authors
Nawaz, M Strupinski, W Stenarson, J Persson, SHM Zirath, H
Citation
M. Nawaz et al., Microwave performance and reliability evaluation of MOCVD-grown AlInAs/GaInAs/InP-based HEMTs, MICROW OPT, 20(6), 1999, pp. 357-362
Citations number
15
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
20
Issue
6
Year of publication
1999
Pages
357 - 362
Database
ISI
SICI code
0895-2477(19990320)20:6<357:MPAREO>2.0.ZU;2-0
Abstract
We report on the microwave performance and reliability evaluation of AlInAs /GaInAs/InP HEMTs with InP as a top surface layer grown by MOCVD. It is fou nd that HEMTs with thin InP surface layers provide high threshold voltage u niformity, and less thermal and bias stress degradation compared to convent ional AlInAs/GaInAs/InP HEMTs. A cutoff frequency f(T) of 53 GHz and maximu m frequency f(max) of 210 GHz for a 0.4 mu M gate device is obtained. (C) 1 999 John Wiley & Sons, Inc.