SYNTHETIC SINGLE-CRYSTAL, HOMOEPITAXIALLY GROWN, CVD DIAMOND CAPACITOR

Homoepitaxially grown diamond film capacitor has been fabricated and t ested for capacitance characteristics. Type IIa diamond was chosen for carbon ion implantation and subsequently microwave plasma CVD diamond was grown. CVD diamond film was separated from the base type IIa diam ond substrate by using electrochemical bias. The separated CVD diamond film was annealed at 450 degrees C for 2 h and metallized the film us ing a d.c. magnetron sputtering technique. The observed capacitance of the fabricated device is of the order of picofarads, close to the exp ected value of the capacitance.