(766) ORIENTED V-GROOVE SURFACES ON BR-2-CH3OH ETCHED (100)GAAS WAFERS

Authors
WILSON SW ARMSTRONG RW DAGENAIS M BEARD WT WOOD CEC
Citation
Sw. Wilson et al., (766) ORIENTED V-GROOVE SURFACES ON BR-2-CH3OH ETCHED (100)GAAS WAFERS, Journal of materials science. Materials in electronics, 8(2), 1997, pp. 109-113
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
8
Issue
2
Year of publication
1997
Pages
109 - 113
Database
ISI
SICI code
0957-4522(1997)8:2<109:(OVSOB>2.0.ZU;2-X
Abstract
Etched V-grooves on (100) gallium arsenide crystal surfaces produced u sing various compositions of bromine-in-methanol etchant are bounded b y sidewall surfaces, presumably of Ga atoms, aligned along the origina l {766} position of the bulk crystal as determined by optical and elec tron microscope observations. The measurements are tentatively explain ed by rotational surface reconstruction of Ga-deficient, rehybridized {111} planes.