We studied pixel radiation detectors for X-ray radiography based on semi-in
sulating GaAs: in particular, we investigated both annealed and non-anneale
d contact deposition techniques for the ohmic contact and both ring-guarded
and non-guarded Schottky contact, in order to reduce the leakage current a
nd to increase the maximum applied electric field. Spectroscopic characteri
zation with a 60 keV 241 Am source has been performed. Among these differen
t detectors, the CCE can reach 99 +/- 6%, while the energy resolution Delta
E/E can go down to 4.1 +/- 0.2%. (C) 1999 Elsevier Science B.V. All rights
reserved.