Electronic and optical properties of strained quantum dots modeled by 8-band k center dot p theory

We present a systematic investigation of the elastic, electronic, and linea r optical properties of quantum dot double heterostructures in the. frame o f eight-band k.p theory. Numerical results for the model system of capped p yramid shaped InAs quantum dots in GaAs (001) with {101} facets are present ed. Electron and hole levels, dipole transition energies, oscillator streng ths, and polarizations for both electron-hole and electron-electron transit ions, as well as the exciton ground-state binding energy and the electron g round-state Coulomb charging energy are calculated. The dependence of all t hese properties on the dot size is investigated for base widths between 10 and 20 nm. Results for two different approaches to model strain, continuum elasticity theory, and the Keatings valence force field model in the linear ized version of Kane, are compared to each other. [S0163-1829(99)04608-1].