Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111)

Authors
Vandre, S Kalka, T Preinesberger, C Dahne-Prietsch, M
Citation
S. Vandre et al., Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111), PHYS REV L, 82(9), 1999, pp. 1927-1930
Citations number
28
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
9
Year of publication
1999
Pages
1927 - 1930
Database
ISI
SICI code
0031-9007(19990301)82:9<1927:FCOFLM>2.0.ZU;2-V
Abstract
We report on a core-level photoemission study of lanthanide silicides epita xially grown on n-type Si(111). In the monolayer regime, an extremely low b and bending is observed for the first time, with a Fermi-level position onl y 0.08 +/- 9.05 eV below the conduction-band minimum of silicon. With incre asing coverage, the Fermi-level position moves towards a final Schottky-bar rier height of 0.32 +/- 0.05 eV. This behavior is assigned to the developin g metallicity of the silicide overlayer.