Calculations of electrical levels of deep centers: Application to Au-H andAg-H defects in silicon

Citation
A. Resende et al., Calculations of electrical levels of deep centers: Application to Au-H andAg-H defects in silicon, PHYS REV L, 82(10), 1999, pp. 2111-2114
Citations number
41
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
10
Year of publication
1999
Pages
2111 - 2114
Database
ISI
SICI code
0031-9007(19990308)82:10<2111:COELOD>2.0.ZU;2-Y
Abstract
First-principles local-density formalism cluster theory is used to determin e the structure of Au- and Ag-hydrogen complexes in Si. The theory, with an empirical correction, is then applied to extract their donor and acceptor levels and these are compared with capacitance transient spectroscopic meas urements. Assignments of these levels to specific H defects are then made. Models for the defects responsible for the neutralization of the electrical activity of the Au and Ag centers are proposed.