Strongly anisotropic band dispersion of an image state located above metallic nanowires

Citation
Ig. Hill et Ab. Mclean, Strongly anisotropic band dispersion of an image state located above metallic nanowires, PHYS REV L, 82(10), 1999, pp. 2155-2158
Citations number
34
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
10
Year of publication
1999
Pages
2155 - 2158
Database
ISI
SICI code
0031-9007(19990308)82:10<2155:SABDOA>2.0.ZU;2-6
Abstract
Indium can be grown on Si(111) in a 4 x I pattern that contains rows of In atoms spaced 13.3 Angstrom apart that have quasi-one-dimensional electronic structure. This ordered array of metallic wires produces an image-induced surface state series. We have measured the dispersion of the most tightly b ound (n = 1) image state band and found it to be unconventional because it falls below the free electron parabola perpendicular to the In atom rows. T he most straightforward explanation for this is that the electrons feel the surface corrugation potential produced by the rows of In atoms. We were ab le to infer the form of the potential from our measurements.