Study of an ECR sputtering plasma source

Citation
Ac. La Fontaine et P. Louvet, Study of an ECR sputtering plasma source, PLASMA SOUR, 8(1), 1999, pp. 125-135
Citations number
26
Categorie Soggetti
Physics
Journal title
PLASMA SOURCES SCIENCE & TECHNOLOGY
ISSN journal
09630252 → ACNP
Volume
8
Issue
1
Year of publication
1999
Pages
125 - 135
Database
ISI
SICI code
0963-0252(199902)8:1<125:SOAESP>2.0.ZU;2-R
Abstract
The characteristics of a sputtering plasma source using electron cyclotron resonance, operating on the ERIC facility dedicated to isotope separation b y the plasma process, are described. A simple model based upon the particle conservation equation allows us to derive the ionization probability and t he reflux fraction that govern the source operating conditions, both with a nd without carrier gas. Other data such as sputtering yields of Ar+ and Kr ions on Ni, Cu, Pd and Gd targets as well as their self-sputtering yields have been also determined for the first time in the case of gadolinium. The axial deposit profile of metal atoms on the lateral screen of the source i s in accordance with the Yamamura semi-empirical differential sputtering yi eld, and the ionization coefficient of GdI is deduced.