Substrate heater for the growth of epitaxial silicon films

The single wafer processing of epitaxial Si films requires that special att ention be paid to the design of the substrate heater assembly. This documen t describes the evolution and testing of an in situ heater used to deposit epitaxial Si films at temperatures as high as 700 degrees C. One problem en countered was the production of excessive levels of ultraviolet radiation w hich contributed to the desorption of water vapor from the vacuum chamber w alls during the in situ cleaning process. A second problem involved the for mation of a molybdenum containing film that poisoned epitaxial growth. A fi nal proven in situ heater design is presented which avoids these problems. (C) 1999 American Institute of Physics. [S0034-6748(99)03903-9].