Results from current studies of the parameters of deep centers in 6H-, 4H-,
and 3C- SiC are analyzed. Data are presented on the ionization energy and
capture cross sections of centers formed by doping SiC with different types
of impurities or during irradiation, as well as of intrinsic defects. The
involvement of these centers in radiative and nonradiative recombination is
examined. This analysis of published data illustrates the large effect of
intrinsic defects in the SiC crystal lattice both on the formation of deep
centers and on the properties of the epitaxial layers themselves, such as t
heir doping level and polytype homogeneity. (C) 1999 American Institute of
Physics. [S1063-7826(99)00102-7].