Hot-carrier far infrared emission in silicon

This paper describes studies of hot electroluminescence from silicon transi stor structures in the photon energy range 0.25 to 0.8 eV. The transistor s tructures n-p-n and p-n-p used to obtain the emission spectra generated at accelerating voltages low enough that only one kind of carrier was involved in the excitation. Participation of hot carriers both in direct intersubba nd and indirect intraband radiative transitions is discussed. (C) 1999 Amer ican Institute of Physics. [S1063-7826(99)00402-0].