Photo- and electroluminescence in the 1.3-mu m wavelength range from quantum-dot structures grown on GaAs substrates

Authors
Zhukov, AE Kovsh, AR Egorov, AY Maleev, NA Ustinov, VM Volovik, BV Maksimov, MV Tsatsul'nikov, AF Ledentsov, NN Shernyakov, YM Lunev, AV Musikhin, YG Bert, NA Kop'ev, PS Alferov, ZI
Citation
Ae. Zhukov et al., Photo- and electroluminescence in the 1.3-mu m wavelength range from quantum-dot structures grown on GaAs substrates, SEMICONDUCT, 33(2), 1999, pp. 153-156
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
2
Year of publication
1999
Pages
153 - 156
Database
ISI
SICI code
1063-7826(199902)33:2<153:PAEIT1>2.0.ZU;2-9
Abstract
A method is proposed to increase the emission wavelength from structures gr own on GaAs substrates by inserting a strained InAs quantum dot array into an external InGaAs quantum well. The dependence of the luminescence peak po sition on the active region design was investigated for structures grown by this method. Room-temperature photo- and electroluminescence spectra in th e 1.3-mu m wavelength range are compared. (C) 1999 American Institute of Ph ysics. [S1063-7826(99)00602-X].