An. Kovalev et al., Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation, SEMICONDUCT, 33(2), 1999, pp. 192-199
Changes in the luminescence spectra and current-voltage and capacitance-vol
tage characteristics of light-emitting diodes based on InGaN/AlGaN/GaN hete
rostructures were investigated as functions of operating time during extend
ed use. Sample blue and green light-emitting diodes with InGaN single quant
um-well active layers were examined during operating times of 10(2) - 2 x 1
0(3) h at currents up to 80 mA. An increase in the efficiency at the workin
g currents (15 mA) was observed in the first stage of aging (100-800 h) fol
lowed by a decrease in the second stage. The greatest changes in the spectr
a were observed at low currents (< 0.15 mA). Studies of the distribution of
charged acceptors in the space-charge region showed that their concentrati
on grows in the first stage and falls in the second. Models explaining the
two stages of aging are proposed: 1) activation of Mg acceptors as a result
of destruction of residual Mg-H complexes, and 2) formation of N donor vac
ancies. A model of subthreshold defect formation by hot electrons injected
into the quantum wells is discussed.(1)) (C) 1999 American Institute of Phy
sics. [S1063-7826(99)01402-7].