Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operatingin the 3.0 to 3.6-mu m spectral range

Authors
Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus, NM Talalakin, GN
Citation
M. Aidaraliev et al., Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operatingin the 3.0 to 3.6-mu m spectral range, SEMICONDUCT, 33(2), 1999, pp. 200-205
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
2
Year of publication
1999
Pages
200 - 205
Database
ISI
SICI code
1063-7826(199902)33:2<200:MORRII>2.0.ZU;2-I
Abstract
It is shown that type-I or type-II heterojunctions can be formed at heteroj unction boundaries, depending on the composition of the active region and/o r bounding layers. This is governed by differences in the mechanisms of rad iative recombination, the temperature dependence of the radiation wavelengt h, the polarization type of the radiation, and the current-voltage characte ristics. (C) 1999 American Institute of Physics. [S1063-7826(99)01502-1].