Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998)

Authors
Katsavets, NI Laws, GM Harrison, I Larkins, EC Benson, TM Cheng, TS Foxon, CT
Citation
Ni. Katsavets et al., Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998), SEMICONDUCT, 33(2), 1999, pp. 222-222
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
2
Year of publication
1999
Pages
222 - 222
Database
ISI
SICI code
1063-7826(199902)33:2<222:SOGTLS>2.0.ZU;2-D