DC characteristic of MESFETs at high temperatures

The ability of GaAs MESFET to operate over a wide temperature range require s accurate models to simulate the temperature dependence of various device parameters. In this paper, a new analytical model for the threshold voltage of MESFETs operating beyond 250 degrees C is introduced. The model takes i nto account the effect of the gate leakage current on threshold voltage and is used successfully to overcome the shortcomings of existing models in th e literature in matching the experimental data at temperatures higher than 250 degrees C. The model is used to predict the drain current dependence on temperature in both the subthreshold and saturation region. (C) 1999 Elsev ier Science Ltd. All rights reserved.