Numerical simulation of the pseudo-MOSFET characterization technique

Authors
Munteanu, D Cristoloveanu, S Guichard, E
Citation
D. Munteanu et al., Numerical simulation of the pseudo-MOSFET characterization technique, SOL ST ELEC, 43(3), 1999, pp. 547-554
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
3
Year of publication
1999
Pages
547 - 554
Database
ISI
SICI code
0038-1101(199903)43:3<547:NSOTPC>2.0.ZU;2-9
Abstract
The Psi-MOSFET offers the most appropriate method for detailed electrical c haracterization of bare silicon on insulator (SOI) wafers. 2-D and 3-D nume rical simulations of the Psi-MOSFET are performed in order to validate the basic principles and to uncover several less obvious aspects: evaluation of the geometrical factor, distribution of the current lines: influence of th e sample size and borders proximity. The optimal conditions for accurate op eration of the Psi-MOSFET are clarified in terms of sample dimensions, prob e interdistance, film thickness and contact area. (C) 1999 Elsevier Science Ltd. All rights reserved.